Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

MJE4353

Banner
productimage

MJE4353

TRANS PNP 160V 16A SOT93

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi MJE4353 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, packaged in a TO-218-3 (SOT-93) case, offers a robust 160V collector-emitter breakdown voltage and a continuous collector current capability of 16A. With a maximum power dissipation of 125W and a transition frequency of 1MHz, the MJE4353 is suitable for power switching and amplification circuits. Key electrical parameters include a minimum DC current gain (hFE) of 15 at 8A/2V and a saturation voltage (Vce Sat) of 3.5V at 2A/16A. The device operates across a wide temperature range of -65°C to 150°C. This transistor finds utility in industrial power control, audio amplifiers, and general-purpose power supply circuits.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-218-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3.5V @ 2A, 16A
Current - Collector Cutoff (Max)750µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 8A, 2V
Frequency - Transition1MHz
Supplier Device PackageSOT-93
Current - Collector (Ic) (Max)16 A
Voltage - Collector Emitter Breakdown (Max)160 V
Power - Max125 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MJE200STU

TRANS NPN 25V 5A TO126-3

product image
MMBT2907-D87Z

TRANS PNP 40V 0.8A SOT23-3

product image
SMMBTA42LT3G

TRANS NPN 300V 0.5A SOT23-3