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MJE371

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MJE371

TRANS PNP 40V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi MJE371 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 40 V and a maximum continuous collector current of 4 A. The MJE371 offers a minimum DC current gain (hFE) of 40 at 1 A collector current and 1 V collector-emitter voltage. With a power dissipation capability of 40 W, it is suitable for use in power supply circuits, audio amplifiers, and motor control systems. The TO-126 package facilitates through-hole mounting. Operating temperature ranges from -65°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 1A, 1V
Frequency - Transition-
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max40 W

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