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MJE344G

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MJE344G

TRANS NPN 200V 0.5A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MJE344G is a general-purpose NPN bipolar junction transistor designed for power switching and amplification applications. This component features a maximum collector-emitter breakdown voltage of 200V and a continuous collector current capability of 500mA. With a transition frequency of 15MHz and a maximum power dissipation of 20W, it is suitable for use in power supplies, audio amplifiers, and general-purpose switching circuits across various industrial and consumer electronics sectors. The transistor exhibits a minimum DC current gain (hFE) of 30 at 50mA and 10V, and a Vce(sat) of 1V at 5mA and 50mA. Packaged in a TO-126 (TO-225AA) through-hole configuration, the MJE344G operates over an extended temperature range of -65°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Frequency - Transition15MHz
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)200 V
Power - Max20 W

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