MJE3439G
TRANS NPN 350V 0.3A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJE3439G is a high-voltage NPN bipolar junction transistor (BJT) designed for robust power applications. This device features a 350V collector-emitter breakdown voltage and a continuous collector current capability of up to 300mA. With a transition frequency of 15MHz, it is suitable for various switching and amplification tasks. The MJE3439G offers a maximum power dissipation of 15W and a DC current gain (hFE) of at least 15 at 20mA collector current and 10V collector-emitter voltage. Its saturation voltage is specified at a maximum of 500mV with 4mA base current and 50mA collector current. Packaged in a TO-126 (TO-225AA) through-hole configuration, this component is commonly utilized in power supply circuits, audio amplifiers, and general-purpose high-voltage switching applications across industrial and consumer electronics sectors. It operates within a temperature range of -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 20mA, 10V |
| Frequency - Transition | 15MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 15 W |
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