Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

MJE340STU

Banner
productimage

MJE340STU

TRANS NPN 300V 0.5A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi MJE340STU is a high-voltage NPN bipolar junction transistor (BJT) designed for robust power applications. This through-hole component, housed in a TO-126-3 (TO-225AA) package, offers a collector-emitter breakdown voltage of 300V and a continuous collector current capability of up to 500mA. With a power dissipation rating of 20W and a junction temperature capability of 150°C, the MJE340STU is suitable for use in power supplies, voltage regulators, and general-purpose amplification circuits. Its DC current gain (hFE) is a minimum of 30 at 50mA and 10V. This device is commonly found in industrial, consumer electronics, and lighting control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max20 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

By providing a telephone number and submitting the form, you are consenting to be contacted by SMS text message and agreeing to our Privacy Policy. Message frequency may vary. Message and data rates may apply. Reply STOP to opt out of further messaging. Reply HELP for more information.
Clients Also Buy