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MJE3055TTU

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MJE3055TTU

TRANS NPN 60V 10A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi MJE3055TTU is an NPN bipolar junction transistor designed for demanding applications. This through-hole component, housed in a TO-220-3 package, offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 10A. With a power dissipation of 75W and a transition frequency of 2MHz, it is suitable for power switching and amplification circuits. Key specifications include a minimum DC current gain (hFE) of 20 at 4A, 4V, and a collector cutoff current of 700µA. The Vce saturation is rated at a maximum of 8V at 3.3A, 10A. This device finds application in industrial power supplies, motor control, and general-purpose power amplification.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic8V @ 3.3A, 10A
Current - Collector Cutoff (Max)700µA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 4V
Frequency - Transition2MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max75 W

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