MJE271G
TRANS PNP DARL 100V 2A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJE271G is a PNP Darlington bipolar transistor designed for applications requiring high current gain and moderate voltage handling. This device features a 100V collector-emitter breakdown voltage and a maximum continuous collector current of 2A. With a minimum DC current gain (hFE) of 1500 at 120mA and 10V, it offers significant amplification capabilities. The transition frequency is rated at 6MHz, and the maximum power dissipation is 1.5W. The MJE271G is housed in a TO-126 package, facilitating through-hole mounting. Its saturation voltage (Vce Sat) is a maximum of 3V at 1.2mA base current and 120mA collector current. This component is suitable for use in power switching and amplification circuits across various industrial and consumer electronics sectors. It operates within a temperature range of -65°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 1.2mA, 120mA |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1500 @ 120mA, 10V |
| Frequency - Transition | 6MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.5 W |
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