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MJE210T

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MJE210T

TRANS PNP 40V 5A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MJE210T is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Featuring a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 5A, this device is suitable for power supply regulation, audio amplification, and motor control circuits. The MJE210T offers a minimum DC current gain (hFE) of 45 at 2A and 1V, and a transition frequency of 65MHz. It is packaged in a TO-126 (TO-225AA) through-hole package, rated for a maximum power dissipation of 15W. The operating temperature range is from -65°C to 150°C. This component is commonly utilized in consumer electronics, industrial controls, and automotive systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.8V @ 1A, 5A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce45 @ 2A, 1V
Frequency - Transition65MHz
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max15 W

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