MJE210G
TRANS PNP 40V 5A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJE210G is a PNP bipolar junction transistor designed for high-power switching and amplifier applications. This device features a 40V collector-emitter breakdown voltage and a maximum collector current of 5A. With a transition frequency of 65MHz and a power dissipation of 15W, the MJE210G is suitable for use in power supplies, audio amplifiers, and general-purpose switching circuits across various industrial sectors. The transistor exhibits a minimum DC current gain (hFE) of 45 at 2A and 1V, with a Vce(sat) of 1.8V at 1A and 5A. It is packaged in a TO-126 (TO-225AA) through-hole configuration and operates within a temperature range of -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A, 1V |
| Frequency - Transition | 65MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 15 W |
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