MJE200TSTU
TRANS NPN 25V 5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJE200TSTU is an NPN bipolar junction transistor (BJT) designed for robust power applications. This component features a collector-emitter breakdown voltage (Vce) of 25 V and a continuous collector current (Ic) capability of up to 5 A. With a maximum power dissipation of 15 W and a transition frequency of 65 MHz, it is suitable for general-purpose amplification and switching tasks. The transistor exhibits a minimum DC current gain (hFE) of 45 at 2 A and 1 V, with a collector cutoff current (Icbo) of 100 nA. It operates across a temperature range of -65°C to 150°C (TJ) and is packaged in a TO-126-3 (TO-225AA) through-hole configuration, supplied in a tube. Applications include power supplies, audio amplifiers, and motor control circuits in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A, 1V |
| Frequency - Transition | 65MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 15 W |
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