MJE182
TRANS PWR NPN 3A 80V TO225AAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJE182 is an NPN bipolar junction transistor (BJT) designed for power applications. This through-hole component, packaged in a TO-225AA (TO-126-3) case, offers a collector-emitter breakdown voltage of 80 V and a continuous collector current capability of 3 A. With a maximum power dissipation of 12.5 W and a transition frequency of 50 MHz, the MJE182 is suitable for use in power switching and amplification circuits. It features a minimum DC current gain (hFE) of 50 at 100mA collector current and 1V collector-emitter voltage, with a Vce(sat) of 300mV at 50mA base current and 500mA collector current. This component finds application in areas such as power supplies, audio amplifiers, and general-purpose power control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 12.5 W |
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