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MJE181

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MJE181

TRANS NPN 60V 3A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi MJE181, an NPN bipolar junction transistor, offers a 60V collector-emitter breakdown voltage and a maximum collector current of 3A. This through-hole component, housed in a TO-126 package, features a transition frequency of 50MHz and a maximum power dissipation of 12.5W. It exhibits a minimum DC current gain (hFE) of 50 at 100mA and 1V, with a Vce(sat) of 1.7V at 600mA/3A. The collector cutoff current is a maximum of 100nA. The MJE181 is suitable for applications in power supply switching, linear voltage regulation, and general-purpose amplification across various industrial electronics sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.7V @ 600mA, 3A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 1V
Frequency - Transition50MHz
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max12.5 W

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