MJE180PWD
TRANS NPN 40V 3A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJE180PWD is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 40V collector-emitter breakdown voltage and a maximum collector current of 3A. With a transition frequency of 50MHz and a maximum power dissipation of 1.5W, it is suitable for use in power supply circuits, audio amplifiers, and general switching applications across industrial and consumer electronics sectors. The device exhibits a DC current gain (hFE) of a minimum of 50 at 100mA and 1V. It is supplied in a TO-126 package, facilitating through-hole mounting. Key specifications include a collector cutoff current (ICBO) of 100nA and a Vce(sat) of 1.7V at 600mA and 3A. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 600mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 1.5 W |
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