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MJE18006G

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MJE18006G

TRANS NPN 450V 6A TO220

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi MJE18006G, a SWITCHMODE™ Series NPN Bipolar Junction Transistor (BJT), offers a robust solution for demanding applications. This component features a 450V collector-emitter breakdown voltage and a 6A continuous collector current capability. With a maximum power dissipation of 100W and a transition frequency of 14MHz, it is well-suited for power switching and amplification tasks. The device exhibits a saturation voltage of 700mV at 3A collector current, driven by 600mA base current, and a minimum DC current gain of 6 at 3A, 1V. Packaged in a TO-220-3 through-hole configuration, the MJE18006G operates within a temperature range of -65°C to 150°C. This transistor finds utility in various industrial sectors including power supplies and lighting control.

Additional Information

Series: SWITCHMODE™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 600mA, 3A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce6 @ 3A, 1V
Frequency - Transition14MHz
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)6 A
Voltage - Collector Emitter Breakdown (Max)450 V
Power - Max100 W

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