MJE18004D2
TRANS NPN 450V 5A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJE18004D2 is an NPN bipolar junction transistor designed for high-voltage applications. This through-hole component, packaged in a TO-220-3 configuration, features a maximum collector-emitter breakdown voltage of 450 V and a continuous collector current capability of 5 A. The MJE18004D2 offers a power dissipation of 75 W and a transition frequency of 13 MHz. Key electrical parameters include a saturation voltage (Vce(sat)) of 750mV at 400mA collector current and 2A collector current, with a minimum DC current gain (hFE) of 6 at 2A collector current and 1V Vce. The device exhibits a collector cutoff current (Ic(max)) of 100µA and operates across a temperature range of -65°C to 150°C. This onsemi transistor is suitable for use in power supply, lighting, and motor control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 400mA, 2A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 6 @ 2A, 1V |
| Frequency - Transition | 13MHz |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 450 V |
| Power - Max | 75 W |
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