MJE171
TRANS PNP 60V 3A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi MJE171. This PNP bipolar junction transistor (BJT) is packaged in a TO-126 (TO-225AA) through-hole configuration. It features a maximum collector current (Ic) of 3 A and a collector-emitter breakdown voltage (Vce(max)) of 60 V. The device offers a transition frequency (fT) of 50 MHz and a maximum power dissipation of 12.5 W. Typical DC current gain (hFE) is 50 at 100 mA and 1 V. Collector cutoff current (Icbo) is specified at 100 nA. The saturation voltage (Vce(sat)) at 600 mA collector current and 3 A is 1.7 V. This component is suitable for applications in general purpose amplification and switching, commonly found in industrial and consumer electronics. Operating temperature range is -65°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 600mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 12.5 W |
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