MJE170
TRANS PNP 40V 3A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJE170 is a PNP bipolar junction transistor designed for robust performance in various electronic applications. This component features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 3A, making it suitable for power switching and amplification tasks. With a power dissipation capability of 12.5W and a transition frequency of 50MHz, it offers efficient operation in demanding environments. The transistor is housed in a TO-126 (TO-225AA) package, facilitating through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 50 at 100mA and 1V, and a collector cutoff current (ICBO) of 100nA. Its saturation voltage (Vce Sat) is a maximum of 1.7V at 600mA collector current and appropriate base drive. The MJE170 operates across a wide temperature range of -65°C to 150°C. This device finds application in power supplies, audio amplifiers, and general-purpose switching circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 600mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 12.5 W |
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