MJE15029
TRANS PNP 120V 8A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJE15029 is a high-performance PNP bipolar junction transistor designed for demanding applications. This device features a maximum collector current (Ic) of 8 A and a collector-emitter breakdown voltage (Vce(max)) of 120 V. With a transition frequency (fT) of 30 MHz and a maximum power dissipation of 50 W, the MJE15029 is suitable for power switching and amplification circuits. The DC current gain (hFE) is a minimum of 20 at 4 A and 2 V, and the saturation voltage (Vce(sat)) is a maximum of 500 mV at 100 mA and 1 A. Packaged in a TO-220-3 through-hole configuration, this transistor operates across a wide temperature range of -65°C to 150°C. Industries such as industrial automation, power supplies, and audio amplification commonly utilize the MJE15029.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 2V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 50 W |
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