MJE13009G
TRANS NPN 400V 12A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJE13009G is an NPN bipolar junction transistor (BJT) designed for high-voltage, high-current switching applications. Featuring a 400 V collector-emitter breakdown voltage and a maximum collector current of 12 A, this device is suitable for power supply designs, lighting control, and motor drive circuits. The MJE13009G offers a transition frequency of 4 MHz and a minimum DC current gain (hFE) of 8 at 5 A collector current and 5 V collector-emitter voltage. Its power dissipation is rated at 2 W. The transistor is housed in a standard TO-220-3 package for through-hole mounting. This component is commonly employed in consumer electronics, industrial power systems, and automotive applications where robust switching performance is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3A, 12A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5A, 5V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 2 W |
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