MJD6039T4
TRANS NPN DARL 80V 4A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD6039T4 is an NPN Darlington bipolar junction transistor, engineered for demanding applications. This surface-mount device, housed in a TO-252-3, DPAK package, offers a robust 80V collector-emitter breakdown voltage (Vce) and a maximum collector current (Ic) of 4A. With a power dissipation capability of 1.75W, it is suitable for power switching and amplification circuits across various industries, including automotive and industrial control. The MJD6039T4 exhibits a high DC current gain (hFE) of a minimum of 500 at 2A and 4V, and a saturation voltage (Vce Sat) of 2.5V at 8mA and 2A. It operates within a temperature range of -65°C to 150°C. The component is supplied in Tape & Reel packaging for efficient automated assembly.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 8mA, 2A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 2A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.75 W |
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