MJD5731T4
TRANS PNP 350V 1A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD5731T4 is a PNP bipolar junction transistor designed for demanding applications. This device features a high collector-emitter breakdown voltage of 350V and a continuous collector current capability of 1A. With a maximum power dissipation of 1.56W and a transition frequency of 10MHz, it offers robust performance in power switching and linear amplification circuits. The transistor exhibits a Vce(sat) of 1V at 200mA/1A and a typical DC current gain (hFE) of 30 at 300mA/10V. Packaged in a standard DPAK (TO-252-3) surface-mount configuration, it is supplied on tape and reel for automated assembly. The MJD5731T4 is suitable for use in industrial power supplies, lighting controls, and general-purpose amplification within its specified operating temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
| Frequency - Transition | 10MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 1.56 W |
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