MJD50RLG
TRANS NPN 400V 1A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD50RLG is a bipolar junction transistor (BJT) with an NPN configuration. This device features a maximum collector-emitter breakdown voltage of 400V and a continuous collector current capability of 1A. The transistor exhibits a transition frequency of 10MHz and a maximum power dissipation of 1.56W. Designed for surface mounting, it is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, commonly referred to as DPAK. Key electrical characteristics include a saturation voltage of 1V at 200mA collector current and 1A collector current, and a minimum DC current gain (hFE) of 30 at 300mA collector current and 10V collector-emitter voltage. The collector cutoff current is specified at 200µA. This component is suitable for applications in power switching and general-purpose amplification, often found in industrial and consumer electronics. It is provided in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 200µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
| Frequency - Transition | 10MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 1.56 W |
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