MJD50
TRANS NPN 400V 1A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD50 is an NPN bipolar junction transistor (BJT) designed for surface-mount applications. This component offers a collector-emitter breakdown voltage of 400V and a continuous collector current rating of 1A. The transistor exhibits a transition frequency of 10MHz and a maximum power dissipation of 1.56W. Key electrical parameters include a minimum DC current gain (hFE) of 30 at 300mA and 10V, and a collector saturation voltage (Vce(sat)) of 1V at 200mA collector current and the corresponding base current. The device is available in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package. This transistor finds utility in power switching and amplification circuits across various industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 200µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
| Frequency - Transition | 10MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 1.56 W |
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