MJD45H11-001
TRANS PNP 80V 8A IPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD45H11-001 is a PNP Bipolar Junction Transistor (BJT) designed for robust performance in demanding applications. This device offers a maximum collector current (Ic) of 8A and a collector-emitter breakdown voltage (Vce) of 80V. With a transition frequency (fT) of 90MHz and a maximum power dissipation of 1.75W, it is well-suited for power switching and amplification tasks. The minimum DC current gain (hFE) is 40 at 4A and 1V, and the saturation voltage (Vce(sat)) is a maximum of 1V at 400mA collector current. The MJD45H11-001 features a low collector cutoff current of 1µA. It is supplied in an IPAK package, suitable for through-hole mounting with short leads (TO-251-3 Short Leads, IPAK, TO-251AA). Operating temperature range is from -55°C to 150°C (TJ). This component finds application in areas such as industrial control and automotive systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
| Frequency - Transition | 90MHz |
| Supplier Device Package | IPAK |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.75 W |
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