MJD44H11TF
TRANS NPN 80V 8A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD44H11TF is an NPN bipolar junction transistor designed for demanding applications. This surface-mount device features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 8A. With a transition frequency of 50MHz and a maximum power dissipation of 1.75W, it is suitable for high-power switching and amplification tasks. The MJD44H11TF offers a minimum DC current gain (hFE) of 40 at 4A and 1V, and a Vce saturation of 1V at 400mA and 8A. Its TO-252-3, DPAK (2 Leads + Tab), SC-63 package provides efficient thermal management up to an operating junction temperature of 150°C. This component is commonly utilized in power supply regulation, motor control, and general-purpose amplification circuits across various industrial and consumer electronics sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.75 W |
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