MJD44H11T5
TRANS NPN 80V 8A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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This onsemi MJD44H11T5 is an NPN bipolar junction transistor designed for demanding applications. It features a collector-emitter breakdown voltage of 80V and a continuous collector current rating of 8A, making it suitable for power switching and amplification tasks. The transistor exhibits a DC current gain (hFE) of at least 40 at 4A and 1V, with a saturation voltage (Vce Sat) of 1V maximum at 400mA base current and 8A collector current. Its transition frequency is 85MHz, and it can dissipate up to 1.75W of power. The device is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, delivered on tape and reel. This component is commonly utilized in industrial automation, power management, and automotive systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
| Frequency - Transition | 85MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.75 W |
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