MJD44H11-001
TRANS NPN 80V 8A IPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD44H11-001 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Featuring a 80V collector-emitter breakdown voltage and a continuous collector current capability of 8A, this device is suitable for power control circuits. Its 85MHz transition frequency allows for operation in moderate frequency ranges. The MJD44H11-001 is packaged in an IPAK (TO-251AA) through-hole package, facilitating easy board mounting. Key electrical parameters include a maximum power dissipation of 1.75W and a saturation voltage (Vce) of 1V at 400mA base current and 8A collector current. The DC current gain (hFE) is specified at a minimum of 40 when operating at 4A collector current and 1V collector-emitter voltage. This component finds application in industrial automation, power management, and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
| Frequency - Transition | 85MHz |
| Supplier Device Package | IPAK |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.75 W |
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