MJD42CT4
TRANS PWR PNP 6A 100V DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD42CT4 is a PNP bipolar junction transistor designed for power switching applications. This component features a maximum collector current (Ic) of 6 A and a collector-emitter breakdown voltage (Vce) of 100 V. With a transition frequency of 3 MHz and a maximum power dissipation of 20 W, it is suitable for demanding power management tasks. The transistor exhibits a minimum DC current gain (hFE) of 15 at 3A and 4V, with a Vce saturation of 1.5V at 600mA and 6A. Its surface mount DPAK package (TO-252-3, DPAK) facilitates integration into compact board designs. The MJD42CT4 operates within a temperature range of -65°C to 150°C (TJ) and is supplied in cut tape packaging. This device finds application in various industries including industrial power supplies and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 600mA, 6A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 3A, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 20 W |
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