MJD42C1G
TRANS PNP 100V 6A IPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD42C1G is a PNP Bipolar Junction Transistor (BJT) designed for robust power applications. This device features a 100V collector-emitter breakdown voltage and a continuous collector current capability of 6A. With a maximum power dissipation of 1.75W, it is suitable for applications requiring efficient current handling. The minimum DC current gain (hFE) is 15 at 3A collector current and 4V collector-emitter voltage. The transition frequency is 3MHz. The MJD42C1G is supplied in an IPAK (TO-251AA) package with short leads, facilitating through-hole mounting. Operating temperature range is -65°C to 150°C. This component is commonly utilized in power supply circuits, motor control, and general-purpose amplification within industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 600mA, 6A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 3A, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | IPAK |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.75 W |
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