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MJD42C1

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MJD42C1

TRANS PNP 100V 6A IPAK

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MJD42C1 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage (Vce) of 100 V and a continuous collector current (Ic) capability of up to 6 A. It features a maximum power dissipation of 1.75 W and a transition frequency of 3 MHz. The DC current gain (hFE) is a minimum of 15 at 3 A and 4 V. The transistor exhibits a Vce(sat) of 1.5 V at 600 mA collector current and 600 mA base current. It is packaged in an IPAK (TO-251AA) through-hole configuration, suitable for mounting directly onto a printed circuit board. The operating temperature range is from -65°C to +150°C. This device finds application in power supply circuits, motor control, and general power switching within industrial and consumer electronics.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 600mA, 6A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 3A, 4V
Frequency - Transition3MHz
Supplier Device PackageIPAK
Current - Collector (Ic) (Max)6 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1.75 W

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