MJD41CTFCTF
NPN Epitaxial Silicon TransistorManufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi MJD41CTFCTF is an NPN epitaxial silicon bipolar junction transistor. This device offers a 100 V collector-emitter breakdown voltage and a maximum collector current of 6 A. It features a transition frequency of 3 MHz and a power dissipation of 1.75 W. The minimum DC current gain is specified as 30 at 300 mA collector current and 4 V collector-emitter voltage. With a Vce saturation of 1.5 V at 600 mA collector current, this transistor is designed for surface mounting in a TO-252-3, DPAK package. The operating temperature range is from -65°C to 150°C. This component is qualified to AEC-Q101 and is suitable for automotive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 600mA, 6A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.75 W |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
BC547BTAR
TRANS NPN 45V 0.1A TO92-3
MJE200STU
TRANS NPN 25V 5A TO126-3
PN2369A_D27Z
TRANS NPN 15V 0.2A TO92-3
