MJD41CT4
TRANS PWR NPN 6A 100V DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD41CT4 is a high-performance NPN bipolar junction transistor (BJT) designed for demanding power applications. This component offers a 100V collector-emitter breakdown voltage and a continuous collector current capability of 6A, making it suitable for power switching and amplification circuits. With a maximum power dissipation of 20W and a transition frequency of 3MHz, it provides efficient operation in various industrial and consumer electronics segments. The transistor features a low saturation voltage of 1.5V at 6A collector current, driven by 600mA base current, and a minimum DC current gain of 15 at 3A collector current and 4V collector-emitter voltage. Packaged in a TO-252-3, DPAK (SC-63) surface-mount configuration, and supplied in cut tape, the MJD41CT4 is engineered for robust thermal management and automated assembly processes. It also exhibits a low collector cutoff current of 50µA and operates across a wide temperature range of -65°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 600mA, 6A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 3A, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 20 W |
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