MJD350G
TRANS PNP 300V 0.5A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD350G is a PNP bipolar junction transistor designed for general-purpose switching and amplification applications. This component features a maximum collector-emitter breakdown voltage (Vce) of 300V and a continuous collector current (Ic) capability of 500mA. With a maximum power dissipation of 15W, it is suitable for demanding applications. The transistor offers a minimum DC current gain (hFE) of 30 at 50mA collector current and 10V collector-emitter voltage. It is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, facilitating efficient board layout and thermal management. Operating temperature range is -65°C to 150°C (TJ). This device finds utility in power supply regulation, audio amplifiers, and general industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 15 W |
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