MJD32T4
TRANS POWER PNP 3A 40V DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD32T4 is a PNP bipolar junction transistor designed for power applications. This component offers a collector current capability of 3 A with a maximum collector-emitter voltage of 40 V. It features a transition frequency of 3 MHz and a maximum power dissipation of 15 W. The transistor is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package. Key electrical characteristics include a minimum DC current gain (hFE) of 10 at 3 A and 4 V, and a saturation voltage (Vce(sat)) of 1.2 V at 375 mA and 3 A. The collector cutoff current (Icbo) is specified at a maximum of 50 µA. This device is suitable for use in various industries including automotive and industrial power control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 15 W |
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