MJD31T4
TRANS POWER NPN 3A 40V DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD31T4 is an NPN bipolar junction transistor designed for power applications. This device features a 40V collector-emitter breakdown voltage and supports a continuous collector current of up to 3A. With a maximum power dissipation of 15W and a transition frequency of 3MHz, it is suitable for general-purpose switching and amplification tasks. The MJD31T4 is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, facilitating efficient board space utilization. It exhibits a minimum DC current gain of 10 at 3A and 4V, and a collector cutoff current of 50µA. The saturation voltage (Vce Sat) is a maximum of 1.2V at 375mA base current and 3A collector current. This component finds application in various industrial and consumer electronics, including power supplies and motor control circuits.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 15 W |
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