MJD31CTF
TRANS NPN 100V 3A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD31CTF is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 100V and a maximum continuous collector current (Ic) of 3A. With a transition frequency (fT) of 3MHz and a maximum power dissipation of 1.56W, it is suitable for power switching and amplification circuits. The transistor exhibits a minimum DC current gain (hFE) of 10 at 3A collector current and 4V collector-emitter voltage. Saturation voltage (Vce Sat) is specified at a maximum of 1.2V for an Ic of 3A and an Ib of 375mA. The MJD31CTF is housed in a TO-252-3, DPAK package, enabling efficient thermal management. This device finds application in various industrial and consumer electronic systems requiring robust power handling capabilities. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.56 W |
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