MJD31CRL
TRANS NPN 100V 3A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD31CRL is a bipolar junction transistor (BJT) featuring an NPN configuration. This device offers a collector-emitter breakdown voltage of 100V and a maximum continuous collector current of 3A. With a transition frequency of 3MHz and a maximum power dissipation of 1.56W, it is suitable for power switching and amplification applications. The transistor exhibits a minimum DC current gain (hFE) of 10 at 3A and 4V, with a Vce saturation of 1.2V at 375mA and 3A. The collector cutoff current is a maximum of 50µA. Designed for surface mounting, the MJD31CRL is provided in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, supplied on tape and reel. This component is commonly utilized in industrial and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.56 W |