MJD31C1G
TRANS NPN 100V 3A IPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD31C1G is an NPN bipolar junction transistor featuring a 100V collector-emitter breakdown voltage and a maximum collector current of 3A. This device offers a transition frequency of 3MHz and a maximum power dissipation of 1.56W. With a minimum DC current gain (hFE) of 10 at 3A and 4V, the MJD31C1G is suitable for applications requiring robust switching and amplification. The transistor exhibits a Vce saturation of 1.2V at 375mA and 3A, with a collector cutoff current of 50µA maximum. Packaged in an IPAK (TO-251-3 Short Leads) for through-hole mounting, it operates within a temperature range of -65°C to 150°C. This component finds utility in power supply circuits, motor control, and general-purpose amplification across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | IPAK |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.56 W |