MJD31C1
TRANS NPN 100V 3A IPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD31C1 is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage of 100V and a continuous collector current capability of up to 3A. The MJD31C1 offers a transition frequency of 3MHz and a maximum power dissipation of 1.56W. It is housed in a TO-251-3 Short Leads, IPAK, TO-251AA package, suitable for through-hole mounting. Key electrical characteristics include a saturation voltage (Vce Sat) of 1.2V at 375mA/3A and a DC current gain (hFE) of a minimum of 10 at 3A/4V. The device operates within a temperature range of -65°C to 150°C. This transistor is frequently utilized in power supply circuits, motor control, and general industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | IPAK |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.56 W |