MJD3055TF
TRANS NPN 60V 10A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD3055TF is an NPN bipolar junction transistor (BJT) designed for robust power switching applications. This device features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 10A. With a transition frequency of 2MHz and a power dissipation of 1.75W, it is suitable for use in power supplies, motor control, and general-purpose switching circuits. The transistor exhibits a minimum DC current gain (hFE) of 20 at 4A and 4V. It is supplied in a TO-252-3, DPAK package for surface mounting and operates at temperatures up to 150°C (TJ). The MJD3055TF is packaged on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 8V @ 3.3A, 10A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V |
| Frequency - Transition | 2MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.75 W |
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