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MJD3055G

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MJD3055G

TRANS NPN 60V 10A DPAK

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi's MJD3055G is an NPN bipolar junction transistor designed for robust performance in demanding applications. This surface-mount device, housed in a TO-252-3, DPAK package, offers a 60V collector-emitter breakdown voltage and a maximum collector current of 10A. With a transition frequency of 2MHz and a maximum power dissipation of 1.75W, it is suitable for power switching and amplification circuits. The minimum DC current gain (hFE) is 20 at 4A collector current and 4V Vce. Key parameters include a collector cutoff current of 50µA (max) and a Vce saturation of 8V at 3.3A and 10A. This component finds application in industrial power supplies, motor control, and consumer electronics power management.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic8V @ 3.3A, 10A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 4V
Frequency - Transition2MHz
Supplier Device PackageDPAK
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1.75 W

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