MJD3055
TRANS NPN 60V 10A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD3055 is a bipolar junction transistor (BJT) with an NPN configuration. This device features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 10A. The transistor offers a minimum DC current gain (hFE) of 20 at 4A collector current and 4V collector-emitter voltage. Its transition frequency is 2MHz, and it dissipates a maximum power of 1.75W. The MJD3055 is housed in a surface-mount TO-252-3, DPAK (2 Leads + Tab), SC-63 package. It is suitable for applications in consumer electronics, industrial control, and power management systems. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 8V @ 3.3A, 10A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V |
| Frequency - Transition | 2MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.75 W |
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