MJD2955-001
TRANS PNP 60V 10A IPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD2955-001 is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. This device features a 60V collector-emitter breakdown voltage and a continuous collector current capability of 10A. With a maximum power dissipation of 1.75W and a transition frequency of 2MHz, it is suitable for use in power supply circuits, motor control, and audio amplification. The MJD2955-001 is housed in an IPAK (TO-251AA) package, facilitating through-hole mounting. Key specifications include a minimum DC current gain (hFE) of 20 at 4A and 4V, a collector cutoff current of 50µA, and a Vce saturation of 8V at 3.3A and 10A. Its operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 8V @ 3.3A, 10A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V |
| Frequency - Transition | 2MHz |
| Supplier Device Package | IPAK |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.75 W |
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