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MJD2955

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MJD2955

TRANS PNP 60V 10A DPAK

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MJD2955 is a PNP Bipolar Junction Transistor (BJT) designed for robust performance in demanding applications. This component features a maximum collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 10A. With a transition frequency of 2MHz and a maximum power dissipation of 1.75W, it is suitable for power switching and amplification tasks. The DC current gain (hFE) is a minimum of 20 at 4A and 4V. Packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount format, it offers efficient thermal management. Industries leveraging this transistor include industrial automation, automotive, and power supplies. The MJD2955 operates within a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic8V @ 3.3A, 10A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 4V
Frequency - Transition2MHz
Supplier Device PackageDPAK
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1.75 W

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