MJD253T4
TRANS PWR PNP 4A 100V DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD253T4 is a PNP Bipolar Junction Transistor (BJT) designed for power applications. This surface mount device, packaged in a TO-252-3 DPAK, offers a 100V collector-emitter breakdown voltage and a maximum collector current of 4A. It dissipates up to 12.5W of power and features a transition frequency of 40MHz. The DC current gain (hFE) is a minimum of 40 at 200mA and 1V. The saturation voltage (Vce Sat) is a maximum of 300mV at 50mA and 500mA. Operating across a temperature range of -65°C to 150°C, this transistor is suitable for use in automotive, industrial, and consumer electronics power management circuits. The component is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 1V |
| Frequency - Transition | 40MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 12.5 W |
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