MJD253-1G
TRANS PNP 100V 4A IPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD253-1G is a PNP bipolar junction transistor designed for power switching applications. This device features a 100 V collector-emitter breakdown voltage and a continuous collector current capability of 4 A. With a transition frequency of 40 MHz and a maximum power dissipation of 1.4 W, it offers efficient operation in various electronic systems. The MJD253-1G exhibits a minimum DC current gain (hFE) of 40 at 200 mA and 1 V, and a saturation voltage (Vce(sat)) of 600 mV at 100 mA and 1 A. It is housed in an IPAK (TO-251AA) package with through-hole mounting, suitable for industrial, automotive, and consumer electronics. The operating temperature range is -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 1V |
| Frequency - Transition | 40MHz |
| Supplier Device Package | IPAK |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.4 W |
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