MJD253-001
TRANS PNP 100V 4A IPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi MJD253-001 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 100V collector-emitter breakdown voltage and a maximum continuous collector current of 4A. The device offers a minimum DC current gain (hFE) of 40 at 200mA and 1V, with a transition frequency of 40MHz. It has a power dissipation rating of 1.4W and a Vce saturation of 600mV at 1A collector current and 100mA base current. The MJD253-001 is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. Operating temperature range is from -65°C to 150°C. This transistor is commonly found in power supply regulation, audio amplification, and general industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 1V |
| Frequency - Transition | 40MHz |
| Supplier Device Package | IPAK |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.4 W |
Request a Quote
Clients Also Buy
MPSA92ZL1G
TRANS PNP 300V 0.5A TO92
MJE371G
TRANS PNP 40V 4A TO126
MMBTA06_D87Z
TRANS NPN 80V 0.5A SOT23-3
