MJD243T4
TRANS PWR NPN 4A 100V DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD243T4 is an NPN bipolar junction transistor (BJT) designed for robust power applications. This component features a 100V collector-emitter breakdown voltage and a maximum collector current of 4A, making it suitable for switching and amplification tasks. With a transition frequency of 40MHz and a power dissipation of 12.5W, the MJD243T4 excels in demanding environments. Its low Vce(sat) of 300mV at 500mA collector current and 50mA base current ensures efficient operation. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, supplied in cut tape. This transistor is commonly utilized in power supplies, motor control, and general-purpose amplification circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 1V |
| Frequency - Transition | 40MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 12.5 W |
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