MJD243
TRANS NPN 100V 4A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD243, an NPN bipolar junction transistor, offers robust performance with a 100V collector-emitter breakdown voltage and a maximum collector current of 4A. This device features a transition frequency of 40MHz and a power dissipation of 1.4W, making it suitable for power switching and amplification applications. The DPAK (TO-252-3) surface mount package with a 1.4W power rating ensures efficient thermal management. Key parameters include a minimum DC current gain (hFE) of 40 at 200mA and 1V, and a Vce(sat) of 600mV at 100mA and 1A. Operating across a wide temperature range of -65°C to 150°C, the MJD243 finds utility in industrial control, power management, and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 1V |
| Frequency - Transition | 40MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.4 W |
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