MJD210TF
TRANS PNP 25V 5A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD210TF is a PNP bipolar junction transistor designed for robust performance in demanding applications. This device features a collector-emitter breakdown voltage of 25V and a maximum continuous collector current of 5A. With a transition frequency of 65MHz and a maximum power dissipation of 1.4W, it is well-suited for power switching and amplification circuits. The DC current gain (hFE) is a minimum of 45 at 2A and 1V, with a Vce(sat) of 1.8V at 1A and 5A. The collector cutoff current (ICBO) is specified at 100nA. This transistor is housed in a TO-252-3, DPAK (SC-63) surface mount package, suitable for automated assembly. It operates efficiently at junction temperatures up to 150°C and is supplied in cut tape packaging. The MJD210TF finds application in various industrial and consumer electronics sectors requiring reliable power control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A, 1V |
| Frequency - Transition | 65MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 1.4 W |
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